GS8182S18D Datasheet, PDF (15/31 Pages) GSI Technology – 18Mb Burst of 2 DDR SigmaSIO-II SRAM

GS8182S18D-267/250/200/167
Programmable Impedance HSTL Output Driver DC Electrical Characteristics
Parameter
Symbol
Min.
Max. Units Notes
Output High Voltage
V_OH1
V_DDQ/2 – 0.12 V_DDQ/2 + 0.12
V
1, 3
Output Low Voltage
V_OL1
V_DDQ/2 – 0.12 V_DDQ/2 + 0.12
V
2, 3
Output High Voltage
V_OH2
V_DDQ – 0.2
V_DDQ
V
4, 5
Output Low Voltage
V_OL2
Vss
Notes:
1. I_OH = (V_DDQ/2) / (RQ/5) +/– 15% @ V_OH = V_DDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω).
2. I_OL = (V_DDQ/2) / (RQ/5) +/– 15% @ V_OL = V_DDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω).
3. Parameter tested with RQ = 250Ω and V_DDQ = 1.5 V or 1.8 V
4. Minimum Impedance mode, ZQ = V_SS
5. I_OH = –1.0 mA
6. I_OL = 1.0 mA
0.2
V
4, 6
Operating Currents
-267
-250
-200
-167
Parameter Org Symbol _{0°C –40°C 0°C –40°C 0°C –40°C 0°C –40°C}
to
to
to
to
to
to
to
to
70°C +85°C 70°C +85°C 70°C +85°C 70°C +85°C
Operating
Current
x18
IDD
475 mA 485 mA 450 mA 460 mA 400 mA 410 mA 350 mA 360 mA
Standby
Current (NOP)
x18
ISB1 230 mA 235 mA 220 mA 225 mA 205 mA 210 mA 195 mA 200 mA
Notes:
1. Power measured with output pins floating.
2. All inputs (except ZQ, V_REF) are held at either V_IH or V_IL.
3. Operating supply currents are measured at 100% buss utilization.
4. NOP currents are valid when entering NOP after all pending READ and WRITE cycles are completed.
Test Conditions
V_DD =max.; I_OUT = 0 mA;
Cycle Time ≥ t_KHKH min.
Device deselected;
I_OUT = 0 mA; f = max;
All inputs ≤ 0.2 V or ≥ V_DD – 0.2 V
Rev: 1.08a 8/2005
15/31
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology