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GS8182S18D Datasheet, PDF (12/31 Pages) GSI Technology – 18Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8182S18D-267/250/200/167
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
VDDQ
VREF
VI/O
VIN
IIN
IOUT
Voltage on VDD Pins
Voltage in VDDQ Pins
Voltage in VREF Pins
Voltage on I/O Pins
Voltage on Other Input Pins
Input Current on Any Pin
Output Current on Any I/O Pin
–0.5 to 2.9
–0.5 to VDD
–0.5 to VDDQ
–0.5 to VDDQ +0.3 (≤ 2.9 V max.)
–0.5 to VDDQ +0.3 (≤ 2.9 V max.)
+/–100
+/–100
V
V
V
V
V
mA dc
mA dc
TJ
Maximum Junction Temperature
125
oC
TSTG
Storage Temperature
–55 to 125
oC
TSUB
Storage Under Bias
–50 to 100
oC
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Recommended Operating Conditions, for an extended period of time, may affect
reliability of this component.
Recommended Operating Conditions
Power Supplies
Parameter
Symbol
Min.
Typ.
Max.
Unit Notes
Supply Voltage
VDD
1.7
1.8
1.95
V
1.5 V I/O Supply Voltage
VDDQ
1.4
1.5
1.65
V
1
1.8 V I/O Supply Voltage
VDDQ
1.7
1.8
1.95
V
1
Reference Voltage
VREF
0.68
—
0.95
V
1
Notes:
1. Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 1.4 V ≤ VDDQ ≤ 1.6 V (i.e., 1.5 V I/O)
and 1.7 V ≤ VDDQ ≤ 1.95 V (i.e., 1.8 V I/O) and quoted at whichever condition is worst case.
2. The power supplies need to be powered up simultaneously or in the following sequence: VDD, VDDQ, VREF, followed by signal inputs. The
power down sequence must be the reverse. VDDQ must not exceed VDD.
Operating Temperature
Parameter
Ambient Temperature
(Commercial Range Versions)
Ambient Temperature
(Industrial Range Versions)
Symbol
Min.
Typ.
Max.
Unit Notes
TA
0
25
70
°C
2
TA
–40
25
85
°C
2
Rev: 1.08a 8/2005
12/31
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2003, GSI Technology