GS8182S18D Datasheet, PDF(14/31 Page) GSI Technology – 18Mb Burst of 2 DDR SigmaSIO-II SRAM

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GS8182S18D Datasheet, PDF (14/31 Pages) GSI Technology – 18Mb Burst of 2 DDR SigmaSIO-II SRAM

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GS8182S18D-267/250/200/167

Capacitance

(TA = 25oC, f = 1 MHZ, VDD = 3.3 V)

Parameter

Input Capacitance

Output Capacitance

Note:

This parameter is sample tested.

Symbol

CIN

COUT

Test conditions

VIN = 0 V

VOUT = 0 V

AC Test Conditions

Parameter

Input high level

Input low level

Max. input slew rate

Input reference level

Output reference level

Note:

Test conditions as specified with output loading as shown unless otherwise noted.

Typ. Max. Unit

Conditions

VDDQ

2 V/ns

VDDQ/2

AC Test Load Diagram

RQ = 250 â¦ (HSTL I/O)

50â¦

VREF = 0.75 V

VT = VDDQ/2

Input and Output Leakage Characteristics

Parameter

Input Leakage Current

(except mode pins)

Symbol

IIL

Output Leakage Current

IOL

Test Conditions

VIN = 0 to VDD

Output Disable,

VOUT = 0 to VDDQ

Min.

â2 uA

Max Notes

2 uA

Rev: 1.08a 8/2005

14/31

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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