GA50SICP12-227_15 Datasheet, PDF (3/13 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Junction Transistor/Schottky Diode Co-Pack

GA50SICP12-227
Parameter
Symbol
B: SJT Switching¹
Internal Gate Resistance – ON
Turn On Delay Time
Fall Time, V_DS
Turn Off Delay Time
Rise Time, V_DS
Turn On Delay Time
Fall Time, V_DS
Turn Off Delay Time
Rise Time, V_DS
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
R_G(INT-ON)
t_d(on)
t_f
t_d(off)
t_r
t_d(on)
t_f
t_d(off)
t_r
E_on
E_off
E_tot
E_on
E_off
E_tot
1 _{– All times are relative to the Drain-Source Voltage VDS}
Conditions
Min.
Value
Typical
Max. ^Unit
Notes
V_GS > 2.5 V, V_DS = 0 V, T_j = 175 ºC
T_j = 25 ºC, V_DS = 800 V,
I_D = 50 A, Resistive Load
Refer to Section V for additional
driving information.
T_j = 175 ºC, V_DS = 800 V,
I_D = 50 A, Resistive Load
T_j = 25 ºC, V_DS = 800 V,
I_D = 50 A, Inductive Load
Refer to Section V.
T_j = 175 ºC, V_DS = 800 V,
I_D = 50 A, Inductive Load
50
10
35
35
20
10
35
65
15
1450
400
1850
1410
400
1810
mΩ
ns
ns Fig. 11, 13
ns
ns Fig. 12, 14
ns
ns Fig. 11
ns
ns Fig. 12
µJ Fig. 11, 13
µJ Fig. 12, 14
µJ
µJ Fig. 11
µJ Fig. 12
µJ
Dec 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-modules-copack/
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