GA50SICP12-227_15 Datasheet, PDF (2/13 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Junction Transistor/Schottky Diode Co-Pack

GA50SICP12-227
Parameter
Free-Wheeling SiC Diode
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Surge non-repetitive forward current,
Half Sine Wave
Non-repetitive peak forward current
I²t value
Thermal Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - case
Symbol
V_RRM
I_F
I_F(RMS)
I_FSM
I_F,max
∫i² dt
R_thJC
R_thJC
Conditions
T_C ≤ 115 °C
T_C ≤ 115 °C
T_C = 25 °C, t_P = 10 ms
T_C = 115 °C, t_P = 10 ms
T_C = 25 °C, t_P = 10 µs
T_C = 25 °C, t_P = 10 ms
T_C = 115 °C, t_P = 10 ms
SiC Junction Transistor
SiC Diode
Value
1200
50
87
350
313
1625
450
300
0.57
0.53
Unit Notes
V
A
A
A
A
A²s
°C/W Fig. 20
°C/W Fig. 21
Section II: Static Electrical Characteristics
Parameter
Symbol
Conditions
A: On State
Drain – Source On Resistance
Gate – Source Saturation Voltage
DC Current Gain
FWD forward voltage
B: Off State
Drain Leakage Current
Gate Leakage Current
R_DS(ON)
V_GS,SAT
h_FE
V_F
I_D = 50 A, T_j = 25 °C
I_D = 50 A, T_j = 150 °C
I_D = 50 A, T_j = 175 °C
I_D = 50 A, I_D/I_G = 40, T_j = 25 °C
I_D = 50 A, I_D/I_G = 30, T_j = 175 °C
V_DS = 8 V, I_D = 50 A, T_j = 25 °C
V_DS = 8 V, I_D = 50 A, T_j = 125 °C
V_DS = 8 V, I_D = 50 A, T_j = 175 °C
I_F = 50 A, T_j = 25 °C
I_F = 50 A, T_j = 175 °C
V_DS = 1200 V, V_GS = 0 V, T_j = 25 °C
I_DSS
V_DS = 1200 V, V_GS = 0 V, T_j = 150 °C
V_DS = 1200 V, V_GS = 0 V, T_j = 175 °C
I_SG
V_SG = 20 V, T_j = 25 °C
Min.
Value
Typical
Max. ^Unit
Notes
20
36
mΩ Fig. 5
42
3.42
3.23
V
Fig. 7
100
65
–
Fig. 4
58
1.4
2.1
1.8
3.0
V
100
200
μA
Fig. 8
500
20
nA
Section III: Dynamic Electrical Characteristics
Parameter
Symbol
Conditions
Min.
A: Capacitance and Gate Charge
Input Capacitance
Reverse Transfer/Output Capacitance
Total Output Capacitance Charge
Output Capacitance Stored Energy
Effective Output Capacitance,
time related
Effective Output Capacitance,
energy related
Gate-Source Charge
Gate-Drain Charge
Gate Charge - Total
C_iss
C_rss/C_oss
Qoss
E_OSS
C_oss,tr
V_GS = 0 V, V_DS = 800 V, f = 1 MHz
V_DS = 1 V, f = 1 MHz
V_DS = 400 V, f = 1 MHz
V_DS = 800 V, f = 1 MHz
V_R = 400 V
V_R = 800 V
V_GS = 0 V, V_DS = 800 V, f = 1 MHz
I_D = constant, V_GS = 0 V, V_DS = 0…800 V
C_oss,er
Q_GS
Q_GD
Q_G
V_GS = 0 V, V_DS = 0…800 V
V_GS = -5…3 V
V_GS = 0 V, V_DS = 0…800 V
Value
Typical
7770
3370
335
250
230
345
100
430
315
65
345
410
Max. ^{Unit Notes}
pF
Fig. 9
pF
Fig. 9
nC
µJ Fig. 10
pF
pF
nC
nC
nC
Dec 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-modules-copack/
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