GA50SICP12-227_15 Datasheet, PDF(11/13 Page) GeneSiC Semiconductor, Inc. – Silicon Carbide Junction Transistor/Schottky Diode Co-Pack

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GA50SICP12-227_15 Datasheet, PDF (11/13 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Junction Transistor/Schottky Diode Co-Pack

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GA50SICP12-227

C: Proportional Gate Current Driving

For applications in which the GA50SICP12-227 will operate over a wide range of drain current conditions, it may be beneficial to drive the

device using a proportional gate drive topology to optimize gate drive power consumption. A proportional gate driver relies on instantaneous

drain current ID feedback to vary the steady state gate current IG,steady supplied to the GA100SICP2-227

C:1: Voltage Controlled Proportional Driver

The voltage controlled proportional driver relies on a gate drive IC to detect the GA50SICP12-227 drain-source voltage VDS during on-state to

sense ID. The gate drive IC will then increase or decrease IG,steady in response to ID. This allows IG,steady, and thus the gate drive power

consumption, to be reduced while ID is relatively low or for IG,steady to increase when is ID higher. A high voltage diode connected between the

drain and sense protects the IC from high-voltage when the driver and GA50SICP12-227 are in off-state. A simplified version of this topology

is shown in Figure 29, additional information will be available in the future at http://www.genesicsemi.com/commercial-sic/sic-junction-

transistors/

Gate Signal

Sense

HV Diode

Proportional

Gate Current

Driver

Signal

Output

IG,steady

Figure 29: Simplified Voltage Controlled Proportional Driver

C:2: Current Controlled Proportional Driver

The current controlled proportional driver relies on a low-loss transformer in the drain or source path to provide feedback ID of the

GA50SICP12-227 during on-state to supply IG,steady into the device gate. IG,steady will then increase or decrease in response to ID at a fixed forced

current gain which is set be the turns ratio of the transformer, hforce = ID / IG = N2 / N1. GA50SICP12-227 is initially turned-on using a gate current

pulse supplied into an RC drive circuit to allow ID current to begin flowing. This topology allows IG,steady, and thus the gate drive power

consumption, to be reduced while ID is relatively low or for IG,steady to increase when is ID higher. A simplified version of this topology is shown in

Figure 30, additional information will be available in the future at http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/.

Gate Signal

Dec 2015

Figure 30: Simplified Current Controlled Proportional Driver

Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-modules-copack/

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