GA50SICP12-227_15 Datasheet, PDF (13/13 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Junction Transistor/Schottky Diode Co-Pack

GA50SICP12-227
Section VII: SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/products_sic/igbt_copack/GA50SICP12-227_SPICE.pdf) into
LTSPICE (version 4) software for simulation of the GA50SICP12-227.
* MODEL OF GeneSiC Semiconductor Inc.
* $Revision:
2.0
$
* $Date:
07-DEC-2015
$
*
* GeneSiC Semiconductor Inc.
* 43670 Trade Center Place Ste. 155
* Dulles, VA 20166
*
* COPYRIGHT (C) 2015 GeneSiC Semiconductor Inc.
* ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GA50SICP12-227 SPICE Model
*
.SUBCKT GA50SIPC12 DRAIN GATE SOURCE
Q1 DRAIN GATE SOURCE GA50SIPC12_Q
D1 SOURCE DRAIN GA50SIPC12_D1
D2 SOURCE DRAIN GA50SIPC12_D2
*
.model GA50SIPC12_Q NPN
+ IS
9.833E-48
ISE
1.073E-26
EG
3.23
+ BF
110
BR
0.55
IKF
9000
+ NF
1
NE
2
RB
0.95
+ RE
0.005
RC
0.014
CJC
2.120E-9
+ VJC
2.8346
MJC
0.4846
CJE
6.026E-09
+ VJE
3.1791
MJE
0.5295
XTI
3
+ XTB
-1.5
TRC1
9.0E-03
MFG GeneSiC_Semi
+ IRB
0.005
RBM
0.073
.MODEL GA50SIPC12_D1 D
+ IS
1.99E-16
RS
0.015652965
N
1
+ IKF
1000
EG
1.2
XTI
3
+ TRS1
0.0042
TRS2
1.3E-05
CJO
3.86E-09
+ VJ
1.362328465
M
0.48198551
FC
0.5
+ TT
1.00E-10
IAVE
50
.MODEL GA50SIPC12_D2 D
+ IS
1.54E-19
RS
0.1
N
3.941
+ EG
3.23
TRS1
-0.004
IKF
19
+ XTI
0
FC
0.5
TT
0
.ENDS
* End of GA50SICP12-227 SPICE Model
Dec 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-modules-copack/
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