GA50SICP12-227_15 Datasheet, PDF (10/13 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Junction Transistor/Schottky Diode Co-Pack

GA50SICP12-227
Figure 26: Typical steady state gate current supplied by the
GA15IDDJT22-FR4 board for the GA50SICP12-227 with the
on board resistance of 0.7 Ω
Figure 27: Maximum gate resistance for safe operation of
the GA50SICP12-227 at different drain currents using the
GA15IDDJT22-FR4 board.
B:2: High Speed, Low Loss Drive with Boost Inductor
A High Speed, Low-Loss Driver with Boost Inductor is also capable of driving the GA50SICP12-227 at high-speed. It utilizes a gate drive
inductor instead of a capacitor to provide the high-current gate current pulses I_G,on and I_G,off. During operation, inductor L is charged to a
specified I_G,on current value then made to discharge I_L into the SJT gate pin using logic control of S₁, S₂, S₃, and S₄, as shown in Figure 28.
After turn on, while the device remains on the necessary steady state gate current I_G,steady is supplied from source V_CC through R_G. Please refer
to the article “A current-source concept for fast and efficient driving of silicon carbide transistors” by Dr. Jacek Rąbkowski for additional
information on this driving topology.⁴
S₁
V_CC
S₂
L
D
V_EE
S₃
G
R_G
S₄
V_EE
GR
S
Figure 28: Simplified Inductive Pulsed Drive Topology
3 _{– RG = (1/RG1 +1/RG2)}-1_{. Driver is pre-installed with RG1 = 2.2 Ω, RG2 = 1.0 Ω}
4 _{– Archives of Electrical Engineering. Volume 62, Issue 2, Pages 333–343, ISSN (Print) 0004-0746, DOI: 10.2478/aee-2013-0026, June 2013}
Dec 2015
Latest version of this datasheet at: http://www.genesicsemi.com/commercial-sic/sic-modules-copack/
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