MB82DP02183F Datasheet, PDF (7/32 Pages) Fujitsu Component Limited. – MEMORY Mobile FCRAM CMOS 32 M Bit (2 M word x 16 bit) Mobile Phone Application Specific Memory

MB82DP02183F-65L
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
(Under recommended operating conditions unless otherwise noted)
Parameter
Symbol
Test conditions
Value
Unit
Min Max
Input Leakage Current
ILI
VSS ≤ VIN ≤ VDD
−1.0 +1.0 μA
Output Leakage Current
ILO VSS ≤ VOUT ≤ VDD, Output Disable
−1.0 +1.0 μA
Output High Voltage
VOH VDD = VDD Min, IOH = −0.5 mA
2.4
⎯
V
Output Low Voltage
VOL IOL = 1 mA
⎯
0.4
V
VDD Power Down Current
IDDPS
IDDP4
IDDP8
VDD = VDD Max,
VIN = VDD or VSS,
CE2 = VSS
Sleep
⎯
4 M-bit Partial ⎯
8 M-bit Partial ⎯
10 μA
75 μA
85 μA
VDD Standby Current
IDDS
IDDS1
VDD = VDD Max, VIN = VIH or VIL,
CE1 = CE2 = VIH
VDD = VDD Max, VIN = VDD or VSS,
CE1 = CE2 = VDD
⎯
1.5 mA
⎯ 120 μA
VDD Active Current
IDDA1
IDDA2
VDD = VDD Max,
VIN = VIH or VIL,
CE1 = VIL and CE2 = VIH,
IOUT = 0 mA
tRC/tWC = Min
⎯
tRC/tWC = 1 μs
⎯
30 mA
3 mA
VDD Page Read Current
IDDA3
VDD = VDD Max, VIN = VIH or VIL,
CE1 = VIL and CE2 = VIH,
IOUT = 0 mA, tPRC = Min
⎯
10 mA
Notes : • All voltages are referenced to VSS.
• IDD depends on the output termination, load conditions, and AC characteristics.
• After power on, initialization following power-up timing is required.
DC characteristics are guaranteed after the initialization.
• IDDPS, IDDP4, IDDP8, and IDDS1 might be higher for up to 200 ms after power-up or Power Down/standby mode
entry.
DS05-11460-1E
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