MB82DP02183F Datasheet, PDF (10/32 Pages) Fujitsu Component Limited. – MEMORY Mobile FCRAM CMOS 32 M Bit (2 M word x 16 bit) Mobile Phone Application Specific Memory

MB82DP02183F-65L
(3) Power Down Parameters
(Under recommended operating conditions unless otherwise noted)
Parameter
Symbol
Value
Min
Max
Unit Notes
CE2 Low Setup Time for Power Down Entry
tCSP
10
⎯
ns
CE2 Low Hold Time after Power Down Entry
CE1 High Hold Time following CE2 High
after Power Down Exit [Sleep mode only]
CE1 High Hold Time following CE2 High
after Power Down Exit [not in Sleep mode]
CE1 High Setup Time following CE2 High
after Power Down Exit
tC2LP
tCHH
tCHHP
tCHS
65
⎯
ns
300
⎯
μs *1
65
⎯
ns *2
0
⎯
ns *1
*1 : Applicable also to power-up.
*2 : Applicable when Partial mode is set.
(4) Other Timing Parameters
(Under recommended operating conditions unless otherwise noted)
Parameter
Symbol
Value
Min
Max
Unit Notes
CE1 High to OE Invalid Time for Standby Entry
tCHOX
10
⎯
ns
CE1 High to WE Invalid Time for Standby Entry
tCHWX
10
⎯
ns *1
CE2 Low Hold Time after Power-up
tC2LH
CE1 High Hold Time following CE2 High after Power-up
tCHH
50
⎯
μs
300
⎯
μs
Input Transition Time
tT
1
25
ns *2
*1 : Some data might be written into any address location if tCHWX(Min) is not satisfied.
*2 : The Input Transition Time (tT) at AC testing is 5 ns as shown in below. If actual tT is longer than 5 ns, it may
violate AC specification of some timing parameters.
(5) AC Test Conditions
Parameter
Input High Voltage
Input Low Voltage
Input Timing Measurement Level
Input Transition Time
Symbol
VIH
VIL
VREF
tT
Test Setup
⎯
⎯
⎯
Between VIL and VIH
Value
VDD × 0.8
VDD × 0.2
VDD × 0.5
5
Unit
V
V
V
ns
• AC Measurement Output Load Circuit
VDD
0.1 μF
VSS
Device under
Test
Output
50 pF
10
DS05-11460-1E