MB82DP02183F Datasheet, PDF (4/32 Pages) Fujitsu Component Limited. – MEMORY Mobile FCRAM CMOS 32 M Bit (2 M word x 16 bit) Mobile Phone Application Specific Memory

MB82DP02183F-65L
■ FUNCTION TRUTH TABLE
Mode
CE2 CE1 WE OE
LB
UB A20 to A0
DQ7 to
DQ0
DQ15 to
DQ8
Standby (Deselect)
H
H
X
X
X
X
X
High-Z High-Z
Output Disable*¹
H
H
X
X
*3
High-Z High-Z
Output Disable (No Read)
Read (Upper Byte)
Read (Lower Byte)
Read (Word)
No Write
H
H
Valid
High-Z High-Z
H
L
Valid
High-Z
Output
Valid
H
L
L
H
Valid
Output
Valid
High-Z
H
L
L
L
Valid
Output
Valid
Output
Valid
H
H
Valid
Invalid Invalid
Write (Upper Byte)
Write (Lower Byte)
H
L
Valid
Invalid Input Valid
L H*⁴
L
H
Valid Input Valid Invalid
Write (Word)
L
L
Valid Input Valid Input Valid
Power Down*²
L
X
X
X
X
X
X
High-Z High-Z
Note : L = VIL, H = VIH, X can be either VIL or VIH, High-Z = High impedance
*1 : Should not be kept this logic condition longer than 1 μs.
*2 : Power Down mode can be entered from standby state and all DQ pins are in High-Z state.
Data retention depends on the selection of Power Down program. Refer to “■ POWER DOWN” for the detail.
*3 : Can be either VIL or VIH but must be valid before read or write.
*4 : OE can be VIL during write operation if the following conditions are satisfied;
(1) Write pulse is initiated by CE1. Refer to “(12) Read/Write Timing 1-1 (CE1 Control)” in “■ TIMING
DIAGRAMS”.
(2) OE stays VIL during write cycle.
4
DS05-11460-1E