MB82DP02183F Datasheet, PDF (26/32 Pages) Fujitsu Component Limited. – MEMORY Mobile FCRAM CMOS 32 M Bit (2 M word x 16 bit) Mobile Phone Application Specific Memory

MB82DP02183F-65L
(17) Power-up Timing 2
CE1
CE2
tCHH
VDD
0V
VDD (Min)
Notes : • The tCHH specifies after VDD reaches specified minimum level.
• The tCHH applicable to both CE1 and CE2.
• If transition time of VDD (from 0 V to VDD Min) is longer than 50 ms, “ (16) Power-up Timing 1”
must be applied.
(18) Power Down Entry and Exit Timing
CE1
CE2
tCSP
DQ
tCHS
tC2LP
High-Z
tCHH (tCHHP)
Power Down Entry
Power Down Mode
Power Down Exit
Notes : • This Power Down mode can be also used as a reset timing if “Power-up timing” above could not
be satisfied and Power Down program was not performed prior to this reset.
• CE2 can be brought to Low after the completion of previous read/write operation.
• CE2 must be kept at High during the specified minimum time of tCP.
26
DS05-11460-1E