MB82DP02183F Datasheet, PDF (1/32 Pages) Fujitsu Component Limited. – MEMORY Mobile FCRAM CMOS 32 M Bit (2 M word x 16 bit) Mobile Phone Application Specific Memory

FUJITSU MICROELECTRONICS
DATA SHEET
DS05-11460-1E
MEMORY Mobile FCRAM^TM
CMOS
32 M Bit (2 M word × 16 bit)
Mobile Phone Application Specific Memory
MB82DP02183F-65L
■ DESCRIPTION
The MB82DP02183F is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static
Random Access Memory (SRAM) interface containing 33, 554, 432 storages accessible in a 16-bit format.
This MB82DP02183F is suited for mobile applications such as Cellular Handset and PDA.
*: FCRAM is a trademark of Fujitsu Microelectronics Limited, Japan
■ FEATURES
• Asynchronous SRAM Interface
• Fast Access Time : tAA = tCE = 65 ns Max
• 8 words Page Access Capability : tPAA = 20 ns Max
• Low Voltage Operating Condition : VDD = 2.6 V to 3.1 V
• Operating Temperature: TA = 0 °C to + 70 °C
• Byte Control by LB and UB
• Low Power Consumption : IDDA1 = 30 mA Max
IDDS1 = 120 μA Max
• Various Power Down mode : Sleep
4 M-bit Partial
8 M-bit Partial
■ MAIN SPECIFICATIONS
Parameter
Access Time (Max) (tCE, tAA)
Active Current (Max) (IDDA1)
Standby Current (Max) (IDDS1)
Power Down Current (Max) (IDDPS)
MB82DP02183F-65L
65 ns
30 mA
120 μA
10 μA
Copyright©2009 FUJITSU MICROELECTRONICS LIMITED All rights reserved
2009.8