MB82DBS02163D-70L Datasheet, PDF (6/57 Pages) Fujitsu Component Limited. – 32 M Bit (2 M word×16 bit) Mobile Phone Application Specific Memory

MB82DBS02163D-70L
■ STATE DIAGRAM
• Initial/Standby State
Power Up
Pause Time
Power
Down
CE2 = H
CE2 = L _Standby
CR Set
@M = 1 @M = 0
CE2 Low Pulse
@RP = 0
Asynchronous Operation
(Page Mode)
Synchronous Operation
(Burst Mode)
Common State
CE2 = H
Power
Down
Standby
CE2 = L
@RP = 1
• Asynchronous Operation
CE2 = CE1 = H
Standby
Byte
Control
CE1 = L &
WE = L
CE1 = L
CE1 = H
CE1 = L &
OE = L
CE1 = H
Output
Disable
CE1 = H
WE = H
WE = L
OE = H
OE = L
Write
Byte Control @OE = L
Read
Address Change
or Byte Control
• Synchronous Operation
CE1 = H
CE2 = CE1 = H
Standby
CE1 = H
Write
Suspend
CE1 = H
CE1 = H
Read
Suspend
WE = H
WE = L
CE1 = L,
CE1 = L,
ADV Low Pulse, ADV Low Pulse,
& WE = L
& OE = L
OE = H
OE = L
ADV Low Pulse
Write
ADV Low Pulse
(@BL = 8 or 16, and after burst
operation is completed)
Read
ADV Low Pulse
Note : Assuming all the parameters specified in AC CHARACTERISTICS are satisfied. Refer to the "■FUNCTIONAL
DESCRIPTION", "2. AC Characteristics" in "■ELECTRICAL CHARACTERISTICS", and "■TIMING DIA-
GRAMS" for details.
6