MB82DBS02163D-70L Datasheet, PDF (18/57 Pages) Fujitsu Component Limited. – 32 M Bit (2 M word×16 bit) Mobile Phone Application Specific Memory

MB82DBS02163D-70L
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
Parameter
Input Leakage Current
Output Leakage Current
Symbol
(At recommended operating conditions unless otherwise noted)
Test Conditions
Value
Unit
Min Max
ILI
VSS ≤ VIN ≤ VDD
− 1.0 + 1.0 µA
ILO
0 V ≤ VOUT ≤ VDD,
Output Disable
− 1.0 + 1.0 µA
Output High Voltage Level
Output Low Voltage Level
VDD Power Down Current
VDD Standby Current
VDD Active Current
VDD Page Read Current
VDD Burst Access Current
VOH
VOL
IDDPS
IDDP4
IDDP8
IDDS
IDDS1
IDDS2
IDDA1
IDDA2
IDDA3
IDDA4
VDD = VDD (Min), IOH = − 0.5 mA
IOL = 1 mA
VDD = VDD (Max),
VIN = VIH or VIL,
CE2 ≤ 0.2 V
Sleep
4 M-bit Partial
8 M-bit Partial
VDD = VDD (Max),
VIN (including CLK) = VIH or VIL,
CE1 = CE2 = VIH
VDD = VDD (Max),
VIN (including CLK) ≤ 0.2 V or
VIN (including CLK) ≥ VDD − 0.2 V,
CE1 = CE2 ≥ VDD − 0.2 V
VDD = VDD (Max), tCK = Min _{RL = 6}
VIN ≤ 0.2 V or VIN ≥ VDD −
0.2 V,
CE1 = CE2 ≥ VDD − 0.2 V ^{RL = 3, 4, 5}
VDD = VDD (Max),
VIN = VIH or VIL,
CE1 = VIL and CE2 = VIH,
IOUT = 0 mA
tRC/tWC = Min
tRC/tWC = 1 µs
VDD = VDD (Max), VIN = VIH or VIL,
CE1 = VIL and CE2 = VIH,
IOUT = 0 mA, tPRC = Min
VDD = VDD (Max), VIN = VIH or VIL,
CE1 = VIL and CE2 = VIH,
tCK = tCK (Min), BL = Continuous,
IOUT = 0 mA
1.4
⎯
V
⎯
0.4
V
⎯
10 µA
⎯
45 µA
⎯
55 µA
⎯
1.5 mA
⎯
100 µA
⎯
600 µA
⎯
200 µA
⎯
30 mA
⎯
3
mA
⎯
10 mA
⎯
20 mA
Notes : • All voltages are referenced to VSS = 0 V.
• IDD depends on the output termination, load conditions, and AC characteristics.
• After power on, initialization following Power-up timing is required. DC characteristics are guaranteed
after the initialization.
• IDDPS, IDDP4, IDDP8, IDDS1, and IDDS2çmight be higher for up to 200ms after Power-up or power down/standby
mode entry.
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