MB82DBS02163D-70L Datasheet, PDF (1/57 Pages) Fujitsu Component Limited. – 32 M Bit (2 M word×16 bit) Mobile Phone Application Specific Memory

FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-11437-3E
MEMORY Mobile FCRAM^TM
CMOS
32 M Bit (2 M word×16 bit)
Mobile Phone Application Specific Memory
MB82DBS02163D-70L
■ DESCRIPTION
The FUJITSU MB82DBS02163D is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous
Static Random Access Memory (SRAM) interface containing 33,554,432 storages accessible in a 16-bit format.
MB82DBS02163D is utilized using a FUJITSU advanced FCRAM core technology and improved integration in
comparison to regular SRAM.
The MB82DBS02163D adopts the asynchronous page mode and the synchronous burst mode for fast memory
access as user configurable options.
This MB82DBS02163D is suited for mobile applications such as Cellular Handset and PDA.
*: FCRAM is a trademark of Fujitsu Limited, Japan
■ FEATURES
• Asynchronous SRAM Interface
• Fast Access Time : tCE = 70 ns Max
• 8 words Page Access Capability : tPAA = 20 ns Max
• Burst Read/Write Access Capability : tAC = 8 ns Max
• Low Voltage Operating Condition : VDD = 1.7 V to 1.95 V
• Operating Temperature : TA = − 10 °C to + 70 °C
• Byte Control by LB and UB
• Low-Power Consumption : IDDA1 = 30 mA Max
IDDS1 = 100 µA Max
• Various Power Down mode : Sleep
4 M-bit Partial
8 M-bit Partial
■ PRODUCT LINEUP
Parameter
Access Time (Max) (tCE, tAA)
CLK Access Time (Max) (tAC)
Active Current (Max) (IDDA1)
Standby Current (Max) (IDDS1)
Power Down Current (Max) (IDDPS)
RL = 5, 6
MB82DBS02163D-70L
70 ns
8 ns
30 mA
100 µA
10 µA
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