MB82DP02183C-65L Datasheet, PDF (5/32 Pages) Fujitsu Component Limited. – 32M Bit (2 M word × 16 bit) Mobile Phone Application Specific Memory

MB82DP02183C-65L
■ FUNCTION TRUTH TABLE
Mode
Standby
(Deselect)
CE2 CE1 WE OE
LB
UB A20 to A0
DQ8 to
DQ1
DQ16 to
DQ9
H
H
X
X
X
X
X
High-Z High-Z
Output Disable*¹
H
H
X
X
*3
High-Z High-Z
Output Disable
(No Read)
Read (Upper Byte)
Read (Lower Byte)
Read (Word)
H
H
Valid
High-Z High-Z
H
L
Valid
High-Z
Output
Valid
H
L
L
H
Valid
Output
Valid
High-Z
H
L
L
L
Valid
Output
Valid
Output
Valid
No Write
H
H
Valid
Invalid Invalid
Write (Upper Byte)
Write (Lower Byte)
H
L
Valid
Invalid Input Valid
L H*⁴
L
H
Valid Input Valid Invalid
Write (Word)
L
L
Valid Input Valid Input Valid
Power Down*²
L
X
X
X
X
X
X
High-Z High-Z
Notes : L = VIL, H = VIH, X can be either VIL or VIH, High-Z = High Impedance
*1 : Should not be kept this logic condition longer than 1 µs.
*2 : Power Down mode can be entered from Standby state and all DQ pins are in High-Z state.
Data retention depends on the selection of Power Down Program.
Refer to “■ Power Down” for the detail.
*3 : Can be either VIL or VIH but must be valid before Read or Write.
*4 : OE can be VIL during Write operation if the following conditions are satisfied;
(1) Write pulse is initiated by CE1. See “(12) READ/WRITE Timing #1-1 (CE1 Control)” in “■ TIMING
DIAGRAMS”.
(2) OE stays VIL during Write cycle.
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