MB82DP02183C-65L Datasheet, PDF (11/32 Pages) Fujitsu Component Limited. – 32M Bit (2 M word × 16 bit) Mobile Phone Application Specific Memory

MB82DP02183C-65L
(3) POWER DOWN PARAMETERS
Parameter
Symbol
CE2 Low Setup Time for Power Down Entry
tCSP
CE2 Low Hold Time after Power Down Entry
CE1 High Hold Time following CE2 High
after Power Down Exit [Sleep mode only]
CE1 High Hold Time following CE2 High
after Power Down Exit [not in Sleep mode]
CE1 High Setup Time following CE2 High
after Power Down Exit
tC2LP
tCHH
tCHHP
tCHS
*1 : Applicable also to power-up.
*2 : Applicable when 4M-bit and 8M-bit Partial mode is programmed.
Value
Min
Max
10
⎯
65
⎯
300
⎯
1
⎯
0
⎯
Unit Note
ns
ns
µs *1
µs *2
ns *1
(4) OTHER TIMING PARAMETERS
Parameter
Symbol
CE1 High to OE Invalid Time for Standby Entry
CE1 High to WE Invalid Time for Standby Entry
CE2 Low Hold Time after Power-up
CE1 High Hold Time following CE2 High after Power-up
tCHOX
tCHWX
tC2LH
tCHH
Value
Min
Max
10
⎯
10
⎯
50
⎯
300
⎯
Unit Note
ns
ns *1
µs
µs
Input Transition Time
tT
1
25
ns *2
*1 : Some data might be written into any address location if tCHWX(Min) is not satisfied.
*2 : The Input Transition Time (tT) at AC testing is 5 ns as shown in below. If actual tT is longer than 5 ns, it may
violate AC specification of some timing parameters.
(5) AC TEST CONDITIONS
Description
Input High Level
Input Low Level
Input Timing Measurement Level
Input Transition Time
Symbol
VIH
VIL
VREF
tT
Test Setup
⎯
⎯
⎯
Between VIL and VIH
Value
VDD × 0.8
VDD × 0.2
VDD × 0.5
5
Unit
Note
V
V
V
ns
• AC MEASUREMENT OUTPUT LOAD CIRCUIT
VDD
0.1 µF
Device under
Test
VSS
Output
50 pF
11