MB84VD23280EA Datasheet, PDF (42/45 Pages) Fujitsu Component Limited. – 64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM

MB84VD23280EA-90/MB84VD23280EE-90
• CE2s Controlled Data Retention Mode (Note 3)
VCCs
2.7 V
VDH
VIH
CE2s
VIL
DATA RETENTION MODE
tCDR
tR
0.2 V
GND
Notes: 1. In CE1s controlled data retention mode, input level of CE2s should be fixed Vccs to Vccs–0.2 V or Vss
to 0.2 V during data retention mode. Other input and input/output pins can be used between –0.3 V to
Vccs+0.3 V.
2. When CE1s is operating at the VIH Min. level, the standby current is given by ISB1s during the transition
of VCCs from 3.3V to VIH Min. level.
3. In CE2s controlled data retention mode, input and input/output pins can be used between
–0.3 V to Vccs+0.3V.
s PIN CAPACITANCE
Parameter
Symbol Condition
Input Capacitance
CIN
VIN = 0
Output Capacitance
COUT
VOUT = 0
Control Pin Capacitance
CIN2
VIN = 0
WP/ACC Pin Capacitance
CIN3
VIN = 0
Note: Test conditions Ta = 25°C, f = 1.0 MHz
Min.




Value
Typ.
TBD
TBD
TBD
TBD
Unit
Max.
TBD
pF
TBD
pF
TBD
pF
TBD
pF
s HANDLING OF PACKAGE
Please handle this package carefully since the sides of packages are right angle.
s CAUTION
1) The high voltage (VID) can not apply to address pins and control pins except RESET. Therefore, it can not
use autoselect and sector protect function by applying the high voltage (VID) to specific pins.
2) For the sector protection, since the high voltage (VID) can be applied to the RESET, it can be protected the
sector useing “Extended sector protect” command.
42