MB84VD23280EA Datasheet, PDF (20/45 Pages) Fujitsu Component Limited. – 64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM

MB84VD23280EA-90/MB84VD23280EE-90
(Continued)
Parameter
Symbol
Conditions
Value
Unit
Min. Typ. Max.
Input Low Level
VIL
—
–0.3 —
0.5
V
Input High Level
VIH
—
2.4
— VCC+0.3 *⁶ V
Voltage for Sector Protection,
and Temporary Sector Unpro- VID
—
11.5 — 12.5 V
tection (RESET) *⁴
Voltage for Program
Acceleration (WP/ACC) *⁴
VACC
—
8.5 9.0
9.5
V
Output Low Voltage Level
VCCf = VCCf Min., IOL=4.0 mA Flash —
—
0.45 V
VOL
VCCs = VCCs Min., IOL=1.0 mA SRAM —
—
0.4
V
Output High Voltage Level
VOH
VCCf = VCCf Min., IOH=–0.1 mA Flash
VCCf–
0.4
—
—
V
VCCs = VCCs Min., IOH=–0.5 mA SRAM 2.2
—
—
V
Flash Low VCCf Lock-Out
Voltage
VLKO
—
2.3
—
2.5
V
*1: The ICC current listed includes both the DC operating current and the frequency dependent component.
*2: ICC active while Embedded Algorithm (program or erase) is in progress.
*3: Automatic sleep mode enables the low power mode when address remains stable for 150 ns.
*4: Applicable for only VCCf applying.
*5: Embedded Alogorithm (program or erase) is in progress. (@5 MHz)
*6: VCC indicates lower of VCCf or VCCs.
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