MB84VD23280EA Datasheet, PDF (24/45 Pages) Fujitsu Component Limited. – 64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM

MB84VD23280EA-90/MB84VD23280EE-90
• Erase/Program Operations (Flash)
Parameter
Symbol
Value
Unit
JEDEC Standard Min. Typ. Max.
Write Cycle Time
Address Setup Time (WE to Addr.)
Address Setup Time to CEf Low During Toggle Bit Polling
Address Hold Time (WE to Addr.)
Address Hold Time from CEf or OE High During Toggle Bit Polling
Data Setup Time
Data Hold Time
Output Enable Hold Time
Read
Toggle and Data Polling
CEf High During Toggle Bit Polling
OE High During Toggle Bit Polling
Read Recover Time Before Write (OE to CEf)
Read Recover Time Before Write (OE to WE)
WE Setup Time (CEf to WE)
CEf Setup Time (WE to CEf)
WE Hold Time (CEf to WE)
CEf Hold Time (WE to CEf)
Write Pulse Width
CEf Pulse Width
Write Pulse Width High
CEf Pulse Width High
Word Programming Operation
Sector Erase Operation *¹
VCCf Setup Time
Voltage Transition Time *²
Rise Time to VID *²
Rise Time to VACC
Recover Time from RY/BY
RESET Pulse Width
Delay Time from Embedded Output Enable
RESET High Level Period Before Read
Program/Erase Valid to RY/BY Delay
Erase Time-out Time *³
Erase Suspend Transition Time *⁴
*1: This does not include the preprogramming time.
tAVAV
tAVWL
—
tWLAX
—
tDVWH
tWHDX
—
—
—
tGHEL
tGHWL
tWLEL
tELWL
tEHWH
tWHEH
tWLWH
tELEH
tWHWL
tEHEL
tWHWH1
tWHWH2
—
—
—
—
—
—
—
—
—
—
—
tWC
90
—
tAS
0
—
tASO
15
—
tAH
45
—
tAHT
0
—
tDS
35
—
tDH
0
—
0
—
tOEH
10
—
tCEPH
20
—
tOEPH
20
—
tGHEL
0
—
tGHWL
0
—
tWS
0
—
tCS
0
—
tWH
0
—
tCH
0
—
tWP
35
—
tCP
35
—
tWPH
30
—
tCPH
30
—
tWHWH1
—
16
tWHWH2
—
1
tVCS
50
—
tVLHT
4
—
tVIDR
500
—
tVACCR
500
—
tRB
0
—
tRP
500
—
tEOE
—
—
tRH
200
—
tBUSY
—
—
tTOW
50
—
tSPD
—
—
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— ns
— µs
—
s
— µs
— µs
— ns
— ns
— ns
— ns
90 ns
— ns
90 ns
— µs
20 µs
*2: This timing is for Sector group Protection Operation.
*3: The time between writes must be less than “tTOW” otherwise that command will not be accepted and erasure will
start. A time-out or “tTOW” from the rising edge of last CEf or WE whichever happens first will initiate the execution
of the Sector Erase command(s).
*4: When the Erase Suspend command is written during the Sector Erase operation, the device will take a maximum
of “tSPD” to suspend the erase operation.
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