MB84VD23280EA Datasheet, PDF (41/45 Pages) Fujitsu Component Limited. – 64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM

MB84VD23280EA-90/MB84VD23280EE-90
s ERASE AND PROGRAMMING PERFORMANCE (Flash)
Parameter
Sector Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
Erase/Program Cycle
Min.
—
—
—
—
100,000
Value
Typ.
1
8
16
—
—
Max.
10
300
360
200
—
Unit
Remarks
s
µs
µs
s
cycle
Excludes programming time
prior to erasure
Excludes system-level
overhead
Excludes system-level
overhead
Excludes system-level
overhead
s DATA RETENTION CHARACTERISTICS (SRAM)
Parameter
Symbol
Data Retention Supply Voltage
VDH
Standby Current
VDH = 3.0 V
IDDS2
Chip Deselect to Data Retention Mode Time
tCDR
Recovery Time
tR
Note tRC: Read cycle time
Min.
1.5
—
0
tRC
Value
Typ.
—
TBD
—
—
Max.
3.3
15
—
—
Unit
V
µA
ns
ns
• CE1s Controlled Data Retention Mode (Note 1)
VCCs
2.7 V
DATA RETENTION MODE
VIH
VDH
CE1s
GND
See Note 2
tCDR
VCCS – 0.2 V
See Note 2
tR
41