MB81EDS516445 Datasheet, PDF (28/52 Pages) Fujitsu Component Limited. – 512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP

MB81EDS516445
■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
(Under recommended operating conditions unless otherwise noted)
Parameter
Symbol
Condition
Value
Unit
Min. Max.
Output High Voltage VOH(DC) IOH = -0.1 mA
VDDQ − 0.2 ⎯
V
Output Low Voltage VOL(DC) IOL = 0.1 mA
Input Leakage
Current
Output Leakage
Current
ILI
0 V ≤ VIN ≤ VDDQ,
All other pins not under test = 0 V
ILO 0 V ≤ VIN ≤ VDDQ, Data out disabled
⎯
0.2 V
−5
5 μA
−5
5 μA
Operating One Bank
Active-Precharge
Current
tRC = tRC min, tCK = tCK min,
Tj ≤ + 105 °C
IDD0
CKE = VIH, CS = VIH
addresses inputs are SWITCHING;
data bus inputs are STABLE
Tj ≤ + 125 °C
⎯
⎯
65
mA
75
Precharge Standby
Current
All banks idle, CKE = VIL,
CS = VIH, tCK = tCK min,
IDD2P address and control inputs are
SWITCHING;
data bus inputs are STABLE
IDD2N
All banks idle, CKE = VIH,
CS = VIH, tCK = tCK min,
address and control inputs are
SWITCHING;
data bus inputs are STABLE
Tj ≤ + 105 °C
⎯
Tj ≤ + 125 °C
⎯
Tj ≤ + 105 °C
⎯
Tj ≤ + 125 °C
⎯
One bank active, BL = 4, tCK = tCK min,
Operating Burst Read
Current
IDD4R
Output pin open, Gapless data,
address inputs are SWITCHING;
⎯
50% data change each burst transfer
Operating Burst Write
Current
IDD4W
One bank active, BL = 4, tCK = tCK min, Gapless data,
address inputs are SWITCHING;
50% data change each burst transfer
⎯
tRC = tRFC min, tCK = tCK min, CKE = VIH,
Auto Refresh Current IDD5 address and control inputs are SWITCHING;
⎯
data bus inputs are STABLE
6
mA
9
15
mA
20
300 mA
380 mA
120 mA
(Continued)
28
DS05-11464-1E