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MB81EDS516445 Datasheet, PDF (11/52 Pages) Fujitsu Component Limited. – 512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP
MB81EDS516445
■ COMMAND TRUTH TABLE
1) Basic Command Truth Table
Command
DESELECT *1
NO OPERATION *1
BURST TERMINATE *2, *3
READ *3, *4
READ with Auto-precharge *3, *4
WRITE *3, *4
WRITE with Auto-precharge *3, *4
BANK ACTIVE *4, *5
PRECHARGE SINGLE BANK *5, *6
PRECHARGE ALL BANKS *5, *6
AUTO REFRESH *6
MODE REGISTER SET *7
Symbol
DESL
NOP
BST
READ
READA
WRIT
WRITA
ACT
PRE
PALL
REF
MRS
CS RAS CAS WE
HXXX
L HHH
L
H
H
L
L
H
L
H
L
H
L
H
L
H
L
L
L
H
L
L
L
L
H
H
L
L
H
L
L
L
H
L
L
L
L
H
L
L
L
L
BA
A10
(AP)
XX
XX
XX
V
L
VH
V
L
VH
V
V
L
XH
XX
VV
A[9:0],
A11, A12
X
X
X
CA
CA
CA
CA
RA
X
X
X
V
Note: V = Valid, L = VIL, H = VIH, X can be either VIL or VIH, RA = Row Address, CA = Column Address
All commands are assumed to be valid state transitions and latched on the rising edge of CK. CKE assume
to be kept High.
*1: NOP and DESL commands have the same functionality. Unless specifically noted, NOP will represent both NOP
and DESL command in later description.
*2: When the current state is IDLE and CKE=L, BST command will represent DPD command. Refer to the “■CKE
COMMAND TRUTH TABLE”.
*3: BST command can be applied to READ or WRIT. READA and WRITA must not be terminated by BST command.
*4: READ, READA, WRIT and WRITA commands can be issued after the corresponding bank has been activated
by ACT commands. Refer to the “■SIMPLIFIED STATE DIAGRAM”.
*5: ACT command can be issued after corresponding bank has been precharged by PRE or PALL command.
Refer to the “■ SIMPLIFIED STATE DIAGRAM”.
*6: REF command can be issued after all banks have been precharged by PRE or PALL command. Refer to the
“■SIMPLIFIED STATE DIAGRAM”.
*7: MRS command can be issued after all banks have been precharged and all DQ are in High-Z. Mode Register
and Extended Mode Register are selected through BA input. Mode Register and Extended Mode Register must
be set by MRS command after power up.
DS05-11464-1E
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