MRF6VP3091N Datasheet, PDF (9/20 Pages) Freescale Semiconductor, Inc – RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs

470--860 MHz BROADBAND REFERENCE CIRCUIT
V_DD = 50 Volts, I_DQ = 450 mA, Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF.
Signal Type
DVB--T (8k OFDM)
P_out
(W)
4.5 Avg.
9 Avg.
18 Avg.
f
(MHz)
470
650
860
470
650
860
470
650
860
G_ps
(dB)
21.7
21.5
21.9
21.8
21.6
21.9
21.8
21.6
21.7
η_D Output Signal PAR IMD Shoulder
(%)
(dB)
(dBc)
12.6
10.1
11.2
10.1
11.6
9.8
20.3
9.9
17.5
9.9
18.5
9.1
31.0
7.9
26.4
8.4
27.6
7.1
--40.1
--43.1
--46.0
--35.9
--40.9
--41.7
--27.8
--37.6
--30.4
V_GG
C11
V_DD
R1
C13
C1
C3 R3
C2
C5
C4 R4
C19 ^C21
C23
C10
C7
C8
C9
C24
R2
C14
C20 _C22
Q1
V_GG
C12 ^MRF6VP3091N
Rev. 1
V_DD
Note: Component numbers C6, C15, C16, C17 and C18 are not used.
Figure 20. MRF6VP3091NR1(NBR1) 470--860 MHz Broadband 2″ × 3.6″ Compact Reference
Circuit Component Layout
Figure 21. MRF6VP3091NR1(NBR1) 470--860 MHz Broadband 2″ × 3.6″ Compact Reference
Circuit Component Layout — Bottom
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
9