MRF6VP3091N Datasheet, PDF (10/20 Pages) Freescale Semiconductor, Inc – RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs

0.500
E _R0.370
A
0.595
A
1.405
1.500
E
0.125
0.430
D
0.642
0.831 ^C
1.000
B
1.171
C
1.359
D
1.570
1.875
2.000
0.0000
0.0050
0.000
A
0.250
E
0.490
Diamond Saw (0.015″) 2X
A
E
0.270
Drill from bottom Dia. = 0.257″
T0--272 0.490″ Copper Heatsink (for 30 mil 1 oz/1 oz PCB)
Designators
Details
A
2 places, mill down cavity 0.250″
B
2 places, on sides, 0.1875 diameter notch 0.020″ deep (N connector notch)
C
4 places, side, drill & tap #2--56 screw 0.500″ deep (SMA holes)
D
4 places, side, drill & tap #4--40 screw 0.500″ deep (N conn holes)
E
2 places drill diameter = 0.257″, from bottom depth = 0.270″
All others, drill through & tap for #4--40 screw
Figure 22. MRF6VP3091NR1(NBR1) 470--860 MHz Broadband 2″ × 3.6″ Compact Reference
Circuit Component Layout — Heatsink
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
10
RF Device Data
Freescale Semiconductor, Inc.