MRF6VP3091N Datasheet, PDF (2/20 Pages) Freescale Semiconductor, Inc – RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (2001--4000 V)
Machine Model (per EIA/JESD22--A115)
B (201--400 V)
Charge Device Model (per JESD22--C101)
IV (>1000 V)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics ⁽¹⁾
Gate--Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
Drain--Source Breakdown Voltage
(I_D = 50 mA, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 50 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V_DS = 100 Vdc, V_GS = 0 Vdc)
I_GSS
—
—
0.5
μAdc
V_(BR)DSS
115
—
—
Vdc
I_DSS
—
—
10
μAdc
I_DSS
—
—
20
μAdc
On Characteristics
Gate Threshold Voltage ⁽¹⁾
(V_DS = 10 Vdc, I_D = 100 μAdc)
Gate Quiescent Voltage
(V_DD = 50 Vdc, I_D = 350 mAdc, Measured in Functional Test)
Drain--Source On--Voltage ⁽¹⁾
(V_GS = 10 Vdc, I_D = 0.25 Adc)
V_GS(th)
0.9
1.6
2.4
Vdc
V_GS(Q)
2.0
2.7
3.5
Vdc
V_DS(on)
—
0.2
—
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance ⁽²⁾
(V_DS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Output Capacitance ⁽²⁾
(V_DS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Input Capacitance ⁽²⁾
(V_DS = 50 Vdc, V_GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
C_rss
—
41
—
pF
C_oss
—
65.4
—
pF
C_iss
—
591
—
pF
Functional Tests (In Freescale Single--Ended Narrowband Test Fixture, 50 ohm system) V_DD = 50 Vdc, I_DQ = 350 mA, P_out = 18 W Avg.,
f = 860 MHz, DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ ±4 MHz Offset @ 4 kHz Bandwidth.
Power Gain
G_ps
21.0
22.0
24.0
dB
Drain Efficiency
η_D
27.5
28.5
—
%
Adjacent Channel Power Ratio
ACPR
—
--62.0
--60.0
dBc
Input Return Loss
1. Each side of device measured separately.
2. Part internally input matched.
IRL
—
--14
--9
dB
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
2
RF Device Data
Freescale Semiconductor, Inc.