MRF6VP3091N Datasheet, PDF (12/20 Pages) Freescale Semiconductor, Inc – RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS — 470--860 MHz BROADBAND REFERENCE CIRCUIT
26
70
V_DD = 50 Vdc, I_DQ = 450 mA, DVB--T (8k OFDM)
24 ^{64 QAM Data Carrier Modulation, 5 Symbols}
60
P_out = 4.5 W
22
G_ps
20
9 W ₅₀
18 W
40
18
η_D
18 W ³⁰
16
9 W ²⁰
4.5 W
14
10
450 500 550 600 650 700 750 800 850 900
f, FREQUENCY (MHz)
Figure 23. Single--Carrier DVB--T (8k OFDM) Power Gain and Drain
Efficiency versus Frequency (Broadband Reference Circuit)
12
V_DD = 50 Vdc, I_DQ = 450 mA, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
10
8
PAR
6
4
IMD⁽¹⁾
10
P_out = 4.5 W ₀
9W
--10
18 W _--20
18 W _--30
2
9 W --40
4.5 W
0
--50
450 500 550 600 650 700 750 800 850 900
f, FREQUENCY (MHz)
(1) Intermodulation distortion shoulder measurement made using
delta marker at 4.2 MHz offset from center frequency.
Figure 24. Single--Carrier DVB--T (8k OFDM) Output PAR and IMD
Shoulder versus Frequency (Broadband Reference Circuit)
26
80
V_DD = 50 Vdc, I_DQ = 450 mA
Pulse Width = 100 μsec, 10% Duty Cycle
24
470 MHz
70
22 ^Gps
20
600 MHz
60
750 MHz
50
750 MHz
18
η_D
16
860 MHz
600 MHz ⁴⁰
470 MHz
860 MHz
30
14
20
0 20 40 60 80 100 120 140 160
P_out, OUTPUT POWER (WATTS) PULSED
Figure 25. Pulsed Power Gain and Drain Efficiency
versus Output Power (Broadband Reference Circuit)
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
12
RF Device Data
Freescale Semiconductor, Inc.