MRF6VP3091N Datasheet, PDF (19/20 Pages) Freescale Semiconductor, Inc – RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs

PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
Date
Sept. 2011
Dec. 2011
Description
• Initial Release of Data Sheet
• Added R5 part numbers MRF6VP3091NR5 and MRF6VP3091NBR5, p. 1
• Fig. 7, CW Power Gain versus Output Power (Single--Ended Narrowband Test Circuit): adjusted x--axis
scale from 0 to 140 watts to 10 to 150 watts, p. 5
• Fig. 10, Intermodulation Distortion Products versus Two--Tone Spacing: added f = 860 MHz to graph
callouts, p. 6
• Added Fig. 21, 470--860 MHz Broadband 2″ × 3.6″ Compact Reference Circuit Component Layout --
470--860 MHz -- Bottom, p. 10
• Added Fig. 22, 470--860 MHz Broadband 2″ × 3.6″ Compact Reference Circuit Component Layout --
470--860 MHz -- Heatsink, p. 10
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
19