MRF6VP3091N Datasheet, PDF (6/20 Pages) Freescale Semiconductor, Inc – RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS — TWO--TONE (SINGLE--ENDED NARROWBAND TEST CIRCUIT)
--10
V_DD = 50 Vdc, I_DQ = 350 mA, f1 = 854 MHz
--20 f2 = 860 MHz, Two--Tone Measurements
--30
3rd Order
--40
5th Order
--50
--60
7th Order
--70
1
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 9. Intermodulation Distortion Products
versus Output Power
--20
--25
V_DD = 50 Vdc, P_out = 90 W (PEP), I_DQ = 350 mA
f = 860 MHz, Two--Tone Measurements
--30
3rd Order
--35
--40
5th Order
--45
--50
--55
7th Order
--60
--65
1
10
90
TWO--TONE SPACING (MHz)
Figure 10. Intermodulation Distortion
Products versus Two--Tone Spacing
23.5
23
I_DQ = 450 mA
22.5
22 _{350 mA}
21.5 _{300 mA}
21 _{250 mA}
20.5
20
1
V_DD = 50 Vdc, f1 = 854 MHz, f2 = 860 MHz
Two--Tone Measurements, 6 MHz Tone Spacing
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 11. Two--Tone Power Gain versus
Output Power
--10
V_DD = 50 Vdc, f1 = 854 MHz, f2 = 860 MHz
Two--Tone Measurements, 6 MHz Tone Spacing
--20
--30
I_DQ = 250 mA
--40
300 mA
--50
350 mA
--60
450 mA
1
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 12. Third Order Intermodulation
Distortion versus Output Power
MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5
6
RF Device Data
Freescale Semiconductor, Inc.