MRF6VP3091N Datasheet, PDF (1/20 Pages) Freescale Semiconductor, Inc – RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
Enhancement--Mode Lateral MOSFETs
Designed for commercial and industrial broadband applications with
frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast
applications.
• Typical Performance (Broadband Reference Circuit): V_DD = 50 Volts,
I_DQ = 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Signal Type
Output
IMD
P_out
f
G_ps η_D Signal PAR Shoulder
(W) (MHz) (dB) (%)
(dB)
(dBc)
DVB--T (8k OFDM) 18 Avg. 470 21.8 31.0
7.9
--27.8
650 21.6 26.4
8.4
--37.6
860 21.7 27.6
7.1
--30.4
Features
• Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,
90 Watts CW Output Power
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Input Matched for Ease of Use
• Qualified Up to a Maximum of 50 V_DD Operation
• Excellent Thermal Stability
• Device can be used Single--Ended or in a Push--Pull Configuration
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• 225°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
Document Number: MRF6VP3091N
Rev. 1, 12/2011
MRF6VP3091NR1
MRF6VP3091NR5
MRF6VP3091NBR1
MRF6VP3091NBR5
470--860 MHz, 90 W, 50 V
BROADBAND
RF POWER LDMOS TRANSISTORS
CASE 1486--03, STYLE 1
TO--270 WB--4
PLASTIC
MRF6VP3091NR1(NR5)
CASE 1484--04, STYLE 1
TO--272 WB--4
PLASTIC
MRF6VP3091NBR1(NBR5)
PARTS ARE PUSH--PULL
Gate 1
Drain 1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Gate 2
Drain 2
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
V_DSS
V_GS
T_stg
T_C
T_J
--0.5, +115 Vdc
--6.0, +10 Vdc
--65 to +150 °C
150
°C
225
°C
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 76°C, 18 W CW, 50 Vdc, I_DQ = 350 mA, 860 MHz
Case Temperature 80°C, 90 W CW, 50 Vdc, I_DQ = 350 mA, 860 MHz
R_θJC
°C/W
0.79
0.82
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2011. All rights reserved._{MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5}
RF Device Data
Freescale Semiconductor, Inc.
1