MRF8P18265H Datasheet, PDF (8/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
V_DD = 30 Vdc, I_DQA = 800 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
58
Ideal
57
56
55
54
Actual
53
52
1845 MHz 1805 MHz
51
50
1845 MHz
1880 MHz
1805 MHz
49
1880 MHz
48
47
28 29 30 31 32 33 34 35 36 37 38 39
P_in, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 30 V
f
(MHz)
1805
1845
1880
P1dB
Watts dBm
197
52.9
194
52.9
190
52.8
P3dB
Watts dBm
226
53.5
223
53.5
226
53.5
Test Impedances per Compression Level
f
(MHz)
Z_source
Ω
Z_load
Ω
1805
P1dB 2.38 -- j6.43 1.30 -- j2.46
1845
P1dB 3.70 -- j7.13 1.40 -- j2.51
1880
P1dB 4.23 -- j7.74 1.27 -- j2.55
Figure 12. Pulsed CW Output Power
versus Input Power @ 30 V
NOTE: Measurement made on the Class AB, carrier side of the device.
MRF8P18265HR6 MRF8P18265HSR6
8
RF Device Data
Freescale Semiconductor, Inc.