MRF8P18265H Datasheet, PDF (7/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

f
MHz
V_DD = 30 Vdc, I_DQA = 800 mA
Max P_out ⁽¹⁾
Watts dBm
Z_source
Ω
Z_load
Ω
1805
195
52.9
2.38 -- j6.43 1.31 -- j2.51
1840
195
52.9
3.70 -- j7.13 1.21 -- j2.50
1880
190
52.8
4.23 -- j7.74 1.24 -- j2.51
(1) Maximum output power measurement reflects pulsed 1 dB gain compression.
Z_source = Test circuit impedance as measured from gate contact to ground.
Z_load = Test circuit impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
Z _source
Z _load
Figure 10. Carrier Side Load Pull Performance — Maximum P1dB Tuning
f
MHz
V_DD = 30 Vdc, I_DQA = 800 mA
Max Eff. ⁽¹⁾
%
Z_source
Ω
Z_load
Ω
1805
69.3
2.38 -- j6.43
3.10 -- j1.22
1840
68.9
3.70 -- j7.13
2.59 -- j1.37
1880
68.3
4.23 -- j7.74
2.47 -- j1.17
(1) Maximum output power measurement reflects pulsed 1 dB gain compression.
Z_source = Test circuit impedance as measured from gate contact to ground.
Z_load = Test circuit impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
Z _source
Z _load
Figure 11. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
RF Device Data
Freescale Semiconductor, Inc.
MRF8P18265HR6 MRF8P18265HSR6
7