MRF8P18265H Datasheet, PDF(3/14 Page) Freescale Semiconductor, Inc

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MRF8P18265H Datasheet, PDF (3/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

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Table 4. Electrical Characteristics (TA = 25Â°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical Performance (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQA = 800 mA, VGSB = 1.3 V, 1805--1880 MHz

Bandwidth

Pout @ 1 dB Compression Point, CW

P1dB

224

Pout @ 3 dB Compression Point, CW

P3dB

280

IMD Symmetry @ 17 W PEP, Pout where IMD Third Order

Intermodulation ï 30 dBc

IMDsym

MHz

(Delta IMD Third Order Intermodulation between Upper and Lower

Sidebands > 2 dB)

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

MHz

Gain Flatness in 75 MHz Bandwidth @ Pout = 72 W Avg.

Gain Variation over Temperature

(--30Â°C to +85Â°C)

0.4

âG

0.01

dB/Â°C

Output Power Variation over Temperature

(--30Â°C to +85Â°C) (2)

âP1dB

0.005

dB/Â°C

1. Measurement made with device in a symmetrical Doherty configuration.

2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.

RF Device Data

Freescale Semiconductor, Inc.

MRF8P18265HR6 MRF8P18265HSR6

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