MRF8P18265H Datasheet, PDF (1/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
Document Number: MRF8P18265H
Rev. 1, 2/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier base station applications with
frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: V_DD = 30 Volts,
I_DQA = 800 mA, V_GSB = 1.3 V, P_out = 72 Watts Avg., IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
G_ps
(dB)
η_D
Output PAR ACPR
(%)
(dB)
(dBc)
1805 MHz
1840 MHz
1880 MHz
15.9
44.8
16.1
43.4
16.0
43.7
6.9
--31.7
7.0
--31.7
6.7
--32.2
MRF8P18265HR6
MRF8P18265HSR6
1805--1880 MHz, 72 W AVG., 30 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 280 Watts CW
Output Power (2 dB Input Overdrive from Rated P_out)
• Typical P_out @ 3 dB Compression Point ≃ 280 Watts CW
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common Source
S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
CASE 375I--04
NI--1230--8
MRF8P18265HR6
CASE 375J--03
NI--1230S--8
MRF8P18265HSR6
Table 1. Maximum Ratings
N.C. 1
8 VBW_A
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
CW Operation @ T_C = 25°C
Derate above 25°C
Symbol
V_DSS
V_GS
V_DD
T_stg
T_C
T_J
CW
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
446
4.5
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
RF_inA/V_GSA 2
7 RF_outA/V_DSA
RF_inB/V_GSB 3
6 RF_outB/V_DSB
N.C. 4
(Top View)
5 VBW_B
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 74°C, 72.5 W CW, 30 Vdc, I_DQA = 800 mA, V_GSB = 1.3 V, 1880 MHz
Case Temperature 90°C, 260 W CW⁽⁴⁾, 30 Vdc, I_DQA = 800 mA, V_GSB = 1.3 V, 1880 MHz
R_θJC
0.27
0.25
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
© Freescale Semiconductor, Inc., 2010, 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8P18265HR6 MRF8P18265HSR6
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