MRF8P18265H Datasheet, PDF (2/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics ⁽¹⁾
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(V_DS = 30 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
1
μAdc
Gate--Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
1
μAdc
On Characteristics ⁽¹⁾
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 200 μAdc)
V_GS(th)
1.1
1.9
2.6
Vdc
Gate Quiescent Voltage
(V_DD = 30 Vdc, I_DA = 800 mAdc, Measured in Functional Test)
V_GS(Q)
1.8
2.6
3.3
Vdc
Drain--Source On--Voltage
(V_GS = 10 Vdc, I_D = 2 Adc)
V_DS(on)
0.1
0.15
0.3
Vdc
Functional Tests ^(2,3) (In Freescale Doherty Test Fixture, 50 ohm system) V_DD = 30 Vdc, I_DQA = 800 mA, V_GSB = 1.3 V, P_out = 72 W Avg.,
f = 1880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Drain Efficiency
G_ps
13.8
16.0
17.0
dB
η_D
41.0
43.7
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
6.0
6.7
—
dB
Adjacent Channel Power Ratio
ACPR
—
--32.2
--28.0
dBc
Typical Broadband Performance ⁽³⁾ (In Freescale Doherty Test Fixture, 50 ohm system) V_DD = 30 Vdc, I_DQA = 800 mA, V_GSB = 1.3 V,
P_out = 72 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
G_ps
(dB)
η_D
Output PAR
ACPR
(%)
(dB)
(dBc)
1805 MHz
15.9
44.8
6.9
--31.7
1840 MHz
16.1
43.4
7.0
--31.7
1880 MHz
16.0
43.7
6.7
--32.2
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in a symmetrical Doherty configuration.
(continued)
MRF8P18265HR6 MRF8P18265HSR6
2
RF Device Data
Freescale Semiconductor, Inc.