MRF8P18265H Datasheet, PDF (13/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
Date
Aug. 2010
Feb. 2012
Description
• Initial Release of Data Sheet
• Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 2
• Removed Fig. 5, Possible Circuit Topologies, and renumbered all subsequent figures, p. 5--8
• Replaced Case Outline 375I--03, Issue B with 375I--04, Issue C, p. 1, 9, 10. On Sheet 2, changed
dimension F in mm from 0.1--0.18 to 0.10--0.18, changed dimension U in mm from 0.89--1.02 to 0.89--1.14,
changed dimension W3 in mm from 12.47--12.72 to 12.47--12.73.
• Replaced Case Outline 375J--02, Issue A with 375J--03, Issue B, p. 1, 11, 12. On Sheet 2, changed
dimension A in mm from 32.13--32.38 to 32.13--32.39, changed dimension F in mm from 0.1--0.18 to
0.10--0.18, changed dimension U in mm from 8.89--11.43 to 0.89--1.14.
RF Device Data
Freescale Semiconductor, Inc.
MRF8P18265HR6 MRF8P18265HSR6
13