MRF8P18265H Datasheet, PDF (6/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
17
1880 MHz
1840 MHz
16
1805 MHz
η_D
60
0
50
--10
G_ps
15
1880 MHz
1840 MHz
40
--20
V_DD = 30 Vd
1805 MHz
14 ^IDQA ^{= 800 mA}
V_GSB = 1.3 Vdc
30
--30
13
1805 MHz ^{1840 MHz 1880 MHz}
20
--40
ACPR
12
Single--Carrier W--CDMA, 3.84 MHz
10
--50
Channel Bandwidth Input Signal
11
PAR = 9.9 dB @ 0.01% Probability on CCDF ₀
--60
1
10
100
300
P_out, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
18
10
Gain
15
0
12
--10
IRL
9
--20
6
V_DD = 30 Vdc
--30
P_in = 0 dBm
3
I_DQA = 800 mA
--40
V_GSB = 1.3 Vdc
0
--50
1700 1750
1800
1850 1900
1950
2000
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
1
Input Signal
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
0.001 ^{Channel Bandwidth @ ±5 MHz Offset.}
Input Signal PAR = 9.9 dB @ 0.01%
0.0001 ^{Probability on CCDF}
0
2
4
6
8
10
12
PEAK--TO--AVERAGE (dB)
Figure 8. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
MRF8P18265HR6 MRF8P18265HSR6
6
10
0
--10
3.84 MHz
--20
Channel BW
--30
--40
--50
--60 --ACPR in 3.84 MHz
Integrated BW
--70
+ACPR in 3.84 MHz
Integrated BW
--80
--90
--100
--9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9
f, FREQUENCY (MHz)
Figure 9. Single--Carrier W--CDMA Spectrum
RF Device Data
Freescale Semiconductor, Inc.