MRF7S35120HSR3 Datasheet, PDF (8/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Z_load
f = 3500 MHz
f = 2900 MHz
f = 2900 MHz
Z_o = 25 Ω
f = 3500 MHz
Z_source
V_DD = 32 Vdc, I_DQ = 150 mA, P_out = 120 W Peak
f
MHz
Z_source
W
Z_load
W
2900
0.825 - j4.72
6.03 - j0.487
3100
1.1 - j6.74
4.63 - j0.0472
3300
3.95 - j10.8
2.65 - j1.44
3500
18 - j1.1
3.65 - j2.56
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 16. Series Equivalent Source and Load Impedance
MRF7S35120HSR3
8
RF Device Data
Freescale Semiconductor