MRF7S35120HSR3 Datasheet, PDF (6/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
250
3300 MHz −30_C
3500 MHz 25_C
200
3100 MHz 25_C
3500 MHz −30_C
3100 MHz −30_C
3300 MHz 25_C
150
3100 MHz 85_C
100
3300 MHz 85_C
3500 MHz 85_C
50
V_DD = 32 Vdc, I_DQ = 150 mA
Pulse Width = 100 μsec, Duty Cycle = 20%
0
0
5
10
15
20
25
P_in, INPUT POWER (WATTS) PULSED
Figure 9. Pulsed Output Power versus
Input Power
15
V_DD = 32 Vdc, I_DQ = 150 mA, f = 3100 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
13.5
25_C
60
−30_C
50
12
G_ps
40
10.5
T_C = −30_C
30
9
25_C
7.5
85_C
85_C
20
η_D
10
6
0
1
10
100
300
P_out, OUTPUT POWER (WATTS) PULSED
Figure 10. Pulsed Power Gain and Drain Efficiency
versus Output Power — 3100 MHz
15
V_DD = 32 Vdc, I_DQ = 150 mA, f = 3300 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
13.5
G_ps
12
T_C = −30_C
10.5
25_C
9
85_C
η_D
7.5
60
−30_C
50
25_C
40
30
85_C
20
10
6
0
1
10
100
300
P_out, OUTPUT POWER (WATTS) PULSED
Figure 11. Pulsed Power Gain and Drain Efficiency
versus Output Power — 3300 MHz
15
V_DD = 32 Vdc, I_DQ = 150 mA, f = 3500 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
13.5
G_ps
12
T_C = −30_C
10.5
25_C
9
85_C
η_D
7.5
60
−30_C
50
40
25_C
30
85_C
20
10
6
0
1
10
100
300
P_out, OUTPUT POWER (WATTS) PULSED
Figure 12. Pulsed Power Gain and Drain Efficiency
versus Output Power — 3500 MHz
MRF7S35120HSR3
6
RF Device Data
Freescale Semiconductor