MRF7S35120HSR3 Datasheet, PDF (7/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
14
43
13.5
42
η_D
13
41
G_ps
12.5
40
12
11.5
−9
IRL
11
−18
10.5 V_DD = 32 Vdc, I_DQ = 150 mA, P_out = 120 W
Pulse Width = 100 μsec, Duty Cycle = 20%
10
3100 3150 3200 3250 3300 3350 3400
−27
−36
3450 3500
f, FREQUENCY (MHz)
Figure 13. Pulsed Power Gain, Drain Efficiency
and IRL versus Frequency
−28
21
−29
V_DD = 32 Vdc, I_DQ = 900 mA, f = 3500 MHz
Single−Carrier OFDM 802.16d, 64 QAM ³/₄
RCE
20
−30 ^{4 Bursts, 7 MHz Channel Bandwidth, Input Signal}
19
−31 ^{PAR = 9.5 dB @ 0.01% Probability on CCDF}
−32
18
η_D
17
−33
16
13.6
−34
15
13.4
−35
14
13.2
−36
G_ps
13
13
−37
12
12.8
−38
11
12.6
41
41.5
42
42.5
43
43.5
44
P_out, OUTPUT POWER (dBm)
Figure 14. Single - Channel OFDM Relative Constellation Error,
Drain Efficiency and Gain versus Output Power
10¹⁰
10⁹
10⁸
10⁷
90 110 130 150 170 190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 32 Vdc, P_out = 120 W Peak, Pulse Width = 100 μsec,
Duty Cycle = 20%, and η_D = 40%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 15. MTTF versus Junction Temperature
RF Device Data
Freescale Semiconductor
MRF7S35120HSR3
7