MRF7S35120HSR3 Datasheet, PDF (5/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

TYPICAL CHARACTERISTICS
1000
C_oss
100
100
C_iss
10
C_rss
1
Measured with ±30 mV(rms)ac @ 1 MHz
V_GS = 0 Vdc
0.1
0
5
10
15
20
25
30
35
V_DS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain - Source Voltage
T_J = 200°C
10
T_J = 175°C
T_J = 150°C
T_C = 25°C
1
1
10
100
V_DS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
13
50
f = 3500 MHz
G_ps
12
41
3300 MHz
11
3100 MHz
10
32
η_D
23
9
V_DD = 32 Vdc, I_DQ = 150 mA
14
Pulse Width = 100 μsec
Duty Cycle = 20%
8
5
3
10
100 200
P_out, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
56
P3dB = 52 dBm (157 W)
Ideal
55
P2dB = 51.7 dBm (149 W)
54
53 _{P1dB = 51.3 dBm (135 W)}
52
51
Actual
50
49
V_DD = 32 Vdc, I_DQ = 150 mA, f = 3500 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
48
36 37 38 39 40 41 42 43 44 45
P_in, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Output Power versus
Input Power
14
I_DQ = 1000 mA
13
12
500 mA
300 mA
11
10
150 mA
9
V_DD = 32 Vdc, f = 3500 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
8
1
10
100 200
P_out, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
13
12
32 V
11
10
9
8
I_DQ = 150 mA, f = 3500 MHz
7 _{Pulse Width = 100 μsec}
Duty Cycle = 20%
6
3
10
30 V
28 V
26 V
V_DD = 24 V
100
200
P_out, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
RF Device Data
Freescale Semiconductor
MRF7S35120HSR3
5