MRF7S35120HSR3 Datasheet, PDF (1/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for pulsed wideband applications operating at frequencies
between 3100 and 3500 MHz.
• Typical Pulsed Performance: V_DD = 32 Volts, I_DQ = 150 mA,
P_out = 120 Watts Peak (24 Watts Avg.), Pulsed Signal, f = 3500 MHz,
Pulse Width = 100 μsec, Duty Cycle = 20%
Power Gain — 12 dB
Drain Efficiency — 40%
•
Typical WiMAX
P_out = 18 Watts
Performance: V_DD =
Avg., f = 3500 MHz,
32 Volts,
802.16d,
6I^D4^QQ=A9M00³/m₄,A4,
Bursts,
7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF
Power Gain — 13 dB
Drain Efficiency — 16%
RCE — - 33 dB (EVM — 2.2% rms)
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 120 Watts Peak
Power
• Capable of Handling 3 dB Overdrive @ 32 Vdc
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF7S35120HS
Rev. 1, 6/2008
MRF7S35120HSR3
3100- 3500 MHz, 120 W PEAK, 32 V
PULSED
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 465A - 06, STYLE 1
NI - 780S
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
V_DSS
- 0.5, +65
Vdc
V_GS
- 6.0, +10
Vdc
T_stg
- 65 to +150
°C
T_C
150
°C
T_J
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
R_θJC
°C/W
Case Temperature 79°C, 120 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
0.11
Case Temperature 72°C, 120 W Pulsed, 500 μsec Pulse Width, 10% Duty Cycle
0.12
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S35120HSR3
1