MRF7S35120HSR3 Datasheet, PDF(2/11 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

MRF7S35120HSR3 Datasheet, PDF (2/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

◁

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22 - A114)

1C (Minimum)

Machine Model (per EIA/JESD22 - A115)

A (Minimum)

Charge Device Model (per JESD22 - C101)

IV (Minimum)

Table 4. Electrical Characteristics (TC = 25Â°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Gate- Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 32 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 400 Î¼Adc)

Gate Quiescent Voltage

(VDD = 32 Vdc, ID = 150 mAdc, Measured in Functional Test)

Drain- Source On - Voltage

(VGS = 10 Vdc, ID = 2.0 Adc)

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS = 32 Vdc Â± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Output Capacitance

(VDS = 32 Vdc Â± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Input Capacitance

(VDS = 32 Vdc, VGS = 0 Vdc Â± 30 mV(rms)ac @ 1 MHz)

IGSS

Î¼Adc

IDSS

Î¼Adc

IDSS

Î¼Adc

VGS(th)

1.2

1.9

2.7

Vdc

VGS(Q)

1.5

2.4

Vdc

VDS(on)

0.1

0.17

0.3

Vdc

Crss

0.87

Coss

464

Ciss

214

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQ = 150 mA, Pout = 120 W Peak (24 W Avg.), f = 3100 MHz

and f = 3500 MHz, Pulsed, 100 Î¼sec Pulse Width, 20% Duty Cycle, 25 ns Input Rise Time

Power Gain

Gps

10.5

13.5

Drain Efficiency

Î·D

Input Return Loss

IRL

- 15

-8

Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQ = 150 mA, Pout = 120 W Peak

(24 W Avg.), f = 3100 MHz and f = 3500 MHz, Pulsed, 100 Î¼sec Pulse Width, 20% Duty Cycle, 25 ns Input Rise Time

Output Pulse Droop

(500 Î¼sec Pulse Width, 10% Duty Cycle)

DRPout

0.3

Load Mismatch Tolerance

(VSWR = 10:1 at all Phase Angles)

VSWR - T

No Degradation in Output Power

1. Part internally matched both on input and output.

MRF7S35120HSR3

RF Device Data

Freescale Semiconductor

▷