MRF7S35120HSR3 Datasheet, PDF (10/11 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
Date
May 2008
June 2008
Description
• Initial Release of Data Sheet
• Corrected P_out error and changed from 42.5 Watts to 18 Watts, Typical WiMAX Performance bullet, p. 1
MRF7S35120HSR3
10
RF Device Data
Freescale Semiconductor