MRF6V3090NR1 Datasheet, PDF (8/19 Pages) Freescale Semiconductor, Inc – RF Power LDMOS Transistors

TYPICAL CHARACTERISTICS
10⁹
V_DD = 50 Vdc
10⁸
P_out = 18 W Avg.
η_D = 28.5%
10⁷
10⁶
10⁵
10⁴
90
110 130
150 170
190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 18. MTTF versus Junction Temperature -- CW
V_DD = 50 Vdc, I_DQ = 350 mA, P_out = 18 W Average
f
MHz
Z_source
Ω
Z_load
Ω
860
1.58 -- j0.89
3.51 -- j3.98
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured from
drain to ground.
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Z _source
Z _load
Figure 19. Series Equivalent Source and Load Impedance (Narrowband Test Circuit)
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
8
RF Device Data
Freescale Semiconductor, Inc.