MRF6V3090NR1 Datasheet, PDF (1/19 Pages) Freescale Semiconductor, Inc – RF Power LDMOS Transistors

Freescale Semiconductor
Technical Data
Document Number: MRF6V3090N
Rev. 1, 12/2011
RF Power LDMOS Transistors
Enhancement--Mode Lateral MOSFETs
Designed for commercial and industrial broadband applications with
frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast
applications.
• Typical Performance (Narrowband Test Circuit): V_DD = 50 Volts, I_DQ =
350 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Signal Type
P_out
(W)
f
(MHz)
G_ps
(dB)
η_D
ACPR
(%)
(dBc)
DVB--T (8k OFDM)
18 Avg.
860
22.0
28.5
--62.0
MRF6V3090NR1
MRF6V3090NR5
MRF6V3090NBR1
MRF6V3090NBR5
470--860 MHz, 90 W, 50 V
BROADBAND
RF POWER LDMOS TRANSISTORS
• Typical Performance (Broadband Reference Circuit): V_DD = 50 Volts,
I_DQ = 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Signal Type
Output
IMD
P_out
f
G_ps η_D Signal PAR Shoulder
(W) (MHz) (dB) (%)
(dB)
(dBc)
DVB--T (8k OFDM) 18 Avg. 470 21.6 26.8
8.6
--31.8
650 22.9 28.0
8.7
--34.4
860 21.9 28.3
7.9
--29.2
CASE 1486--03, STYLE 1
TO--270 WB--4
PLASTIC
MRF6V3090NR1(NR5)
Features
• Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,
90 Watts CW Output Power
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Input Matched for Ease of Use
• Qualified Up to a Maximum of 50 V_DD Operation
• Integrated ESD Protection
• Excellent Thermal Stability
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• 225°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
CASE 1484--04, STYLE 1
TO--272 WB--4
PLASTIC
MRF6V3090NBR1(NBR5)
PARTS ARE SINGLE--ENDED
Gate
Drain
Gate
Drain
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
Table 2. Thermal Characteristics
Symbol
V_DSS
V_GS
T_stg
T_C
T_J
Value
--0.5, +110
--6.0, +10
-- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 76°C, 18 W CW, 50 Vdc, I_DQ = 350 mA, 860 MHz
Case Temperature 80°C, 90 W CW, 50 Vdc, I_DQ = 350 mA, 860 MHz
R_θJC
°C/W
0.79
0.82
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2010--2011. All rights reserved. _{MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5}
RF Device Data
Freescale Semiconductor, Inc.
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