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MRF6V3090NR1 Datasheet, PDF (2/19 Pages) Freescale Semiconductor, Inc – RF Power LDMOS Transistors
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (2001--4000 V)
Machine Model (per EIA/JESD22--A115)
B (201--400 V)
Charge Device Model (per JESD22--C101)
IV (>1000 V)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(ID = 50 mA, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
IGSS
—
—
0.5
μAdc
V(BR)DSS
115
—
—
Vdc
IDSS
—
—
10
μAdc
IDSS
—
—
20
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
Gate Quiescent Voltage
(VDD = 50 Vdc, ID = 350 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 0.5 Adc)
VGS(th)
0.9
1.6
2.4
Vdc
VGS(Q)
2.0
2.7
3.5
Vdc
VDS(on)
—
0.2
—
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Input Capacitance (1)
(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Crss
—
41
—
pF
Coss
—
65.4
—
pF
Ciss
—
591
—
pF
Functional Tests (In Freescale DVB--T Narrowband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 350 mA, Pout = 18 W Avg.,
f = 860 MHz, DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ ±4 MHz Offset @ 4 kHz Bandwidth.
Power Gain
Gps
21.0
22.0
24.0
dB
Drain Efficiency
ηD
27.5
28.5
—
%
Adjacent Channel Power Ratio
ACPR
—
--62.0
--60.0
dBc
Input Return Loss
1. Part internally input matched.
IRL
—
--14
--9
dB
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
2
RF Device Data
Freescale Semiconductor, Inc.