MRF6V3090NR1 Datasheet, PDF (7/19 Pages) Freescale Semiconductor, Inc – RF Power LDMOS Transistors

TYPICAL CHARACTERISTICS — DVB--T (8k OFDM)
100
10
1
0.1
DVB--T (8k OFDM)
64 QAM Data Carrier Modulation
0.01 _{5 Symbols}
0.001
0.0001
0
2
4
6
8
10
12
PEAK--TO--AVERAGE (dB)
Figure 13. Single--Carrier DVB--T (8k OFDM)
--20
7.61 MHz
--30
--40
--50
4 kHz BW
4 kHz BW
--60
--70
ACPR Measured at 4 MHz Offset
from Center Frequency
--80
--90
DVB--T (8k OFDM)
--100
64 QAM Data Carrier Modulation, 5 Symbols
--110
--5 --4 --3 --2 --1 0 1 2 3 4 5
f, FREQUENCY (MHz)
Figure 14. DVB--T (8k OFDM) Spectrum
23
I_DQ = 450 mA
22.5
22 _{350 mA}
300 mA
21.5
250 mA
21
V_DD = 50 Vdc, f = 860 MHz
DVB--T (8k OFDM), 64 QAM Data
Carrier Modulation, 5 Symbols
20.5
1
10
40
P_out, OUTPUT POWER (WATTS) AVG.
Figure 15. Single--Carrier DVB--T (8k OFDM) Power Gain
versus Output Power (Narrowband Test Circuit)
--54
V_DD = 50 Vdc, f = 860 MHz
--56 ^{DVB--T (8k OFDM), 64 QAM Data}
Carrier Modulation, 5 Symbols
--58
--60
I_DQ = 250 mA
--62
300 mA
--64
--66
--68
1
350 mA
450 mA
10
40
P_out, OUTPUT POWER (WATTS) AVG.
Figure 16. Single--Carrier DVB--T (8k OFDM) ACPR
versus Output Power (Narrowband Test Circuit)
50
V_DD = 50 Vdc, I_DQ = 350 mA
f = 860 MHz, DVB--T (8k OFDM)
40 64 QAM Data Carrier Modulation
5 Symbols
30
85_C
G_ps
20 _{TC = --30_C}
25_C
10
--45
--30_C
--50
η_D
25_C
--55
85_C
--60
ACPR
--65
0
--70
1
10
40
P_out, OUTPUT POWER (WATTS) AVG.
Figure 17. Single--Carrier DVB--T (8k OFDM) Drain
Efficiency, Power Gain and ACPR versus Output Power
(Narrowband Test Circuit)
RF Device Data
Freescale Semiconductor, Inc.
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
7