MRF6V3090NR1 Datasheet, PDF (18/19 Pages) Freescale Semiconductor, Inc – RF Power LDMOS Transistors

PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
Date
Apr. 2010
Dec. 2011
Description
• Initial Release of Data Sheet
• Changed “DVB--T OFDM” to “DVB--T (8k OFDM)” throughout
• Fig. 6, CW Output Power versus Input Power: corrected typographical error in dBm to watts conversion
values, p. 5
• Fig. 7, CW Power Gain versus Output Power (Narrowband Test Circuit): adjusted x--axis scale from 0 to
140 watts to 10 to 150 watts, p. 5
• Updated Fig. 9, Intermodulation Distortion Products versus Output Power, to correct X--axis PEP power
values, p. 6
• Fig. 10, Intermodulation Distortion Products versus Two--Tone Spacing: added f = 860 MHz to graph
callouts, p. 6
• Updated Fig. 11, Two--Tone Power Gain versus Output Power, to correct X--axis PEP power values, p. 6
• Updated Fig. 12, Third Order Intermodulation Distortion versus Output Power, to correct X--axis PEP
power values, p. 6
• Fig. 18, MTTF versus Junction Temperature -- CW: MTTF end temperature on graph changed to match
maximum operating junction temperature, p. 8
• Fig. 19, Series Equivalent Source and Load Impedance: removed plot, p. 9
• Added 470--860 MHz Broadband Reference Circuit frequency table, p. 9
• Added Fig. 20, 470--860 MHz Broadband 2″ × 3″ Compact Reference Circuit Component Layout, p. 9
• Added Table 7, 470--860 MHz Broadband 2″ × 3″ Reference Circuit Component Designations and Values,
p. 10
• Added Fig. 21, Single--Carrier DVB--T (8k OFDM) Power Gain and Drain Efficiency versus Frequency
(Broadband Reference Circuit), p. 11
• Added Fig. 22, Single--Carrier DVB--T (8k OFDM) Output PAR and IMD Shoulder versus Frequency
(Broadband Reference Circuit), p. 11
• Added Fig. 23, Pulsed Power Gain and Drain Efficiency versus Output Power (Broadband Reference
Circuit), p. 11
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
18
RF Device Data
Freescale Semiconductor, Inc.